Title :
GaN films fabricated by ammoniating electrodeposited layers
Author :
Wang, H. ; Chen, X.Y. ; Ng, A.M.C. ; Fang, F. ; Djurisic, Aleksandra B. ; Chan, W.K.
Author_Institution :
Dept. of Phys., Univ. of Hong Kong, Hong Kong, China
Abstract :
GaN films have been fabricated by ammoniating electrodeposited films. We have investigated the influence of electrodeposition parameters on the morphologies and structures of electrodeposited layers on Si(100) subtrates by using SEM and XRD.
Keywords :
III-V semiconductors; X-ray diffraction; electrodeposits; gallium compounds; scanning electron microscopy; semiconductor growth; silicon; wide band gap semiconductors; GaN; Si(100); X-ray diffraction; ammoniating electrodeposited layers; scanning electron microscopy; semiconductor growth; Annealing; Gallium nitride; III-V semiconductor materials; Molecular beam epitaxial growth; Morphology; Optical films; Scanning electron microscopy; Semiconductor films; Substrates; X-ray scattering;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5219909
