Title :
Fabrication of high quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs using deuterium anneal
Author :
Rino Choi ; Onishi, K. ; Chang Seok Kang ; Gopalan, S. ; Renee Nieh ; Kim, Y.H. ; Han, J.H. ; Krishnan, S. ; Hag-ju Cho ; Shahriar, A. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
The effects of high-temperature deuterium annealing on MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode has been studied and compared to the control and forming gas (FG) annealed samples. Both FG and D/sub 2/ anneal improved interface qualities and resulted in better MOSFET characteristics in comparison to control samples. These improvements resulted from both the additional thermal budget of high temperature anneal and the improvement of interface quality caused by the hydrogen and deuterium atoms. But unlike FG D/sub 2/ anneal showed negligible degradation of reliability.
Keywords :
MOSFET; annealing; deuterium; dielectric thin films; hafnium compounds; D/sub 2/; HfO/sub 2/; HfO/sub 2/ gate dielectric MOSFETs; TaN; TaN gate electrode; deuterium anneal; high quality gate dielectric; high-temperature D/sub 2/ annealing; interface quality improvement; thermal budget; ultra-thin HfO/sub 2/ gate dielectric; Annealing; Deuterium; Dielectrics; Electrodes; Fabrication; Hafnium oxide; Hydrogen; MOSFETs; Temperature; Thermal degradation;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175914
