Fabrication of high quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs using deuterium anneal

Author

Rino Choi ; Onishi, K. ; Chang Seok Kang ; Gopalan, S. ; Renee Nieh ; Kim, Y.H. ; Han, J.H. ; Krishnan, S. ; Hag-ju Cho ; Shahriar, A. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

613

Lastpage

616

Abstract

The effects of high-temperature deuterium annealing on MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode has been studied and compared to the control and forming gas (FG) annealed samples. Both FG and D/sub 2/ anneal improved interface qualities and resulted in better MOSFET characteristics in comparison to control samples. These improvements resulted from both the additional thermal budget of high temperature anneal and the improvement of interface quality caused by the hydrogen and deuterium atoms. But unlike FG D/sub 2/ anneal showed negligible degradation of reliability.

Keywords

MOSFET; annealing; deuterium; dielectric thin films; hafnium compounds; D/sub 2/; HfO/sub 2/; HfO/sub 2/ gate dielectric MOSFETs; TaN; TaN gate electrode; deuterium anneal; high quality gate dielectric; high-temperature D/sub 2/ annealing; interface quality improvement; thermal budget; ultra-thin HfO/sub 2/ gate dielectric; Annealing; Deuterium; Dielectrics; Electrodes; Fabrication; Hafnium oxide; Hydrogen; MOSFETs; Temperature; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175914

Filename

1175914