Title :
A high performance submicron twin tub V technology for custom VLSI applications
Author :
Leung, C.W. ; Chen, M.L. ; Cochran, W.T. ; Thoma, M.J. ; Grugett, B.C. ; Yang, T. ; Stone, D.R. ; Tsai, N.S.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
A fifth-generation, high-performance twin-tub, two-level metal, submicrometer CMOS technology has been developed for 5-V custom VLSI applications. This technology utilizes fabrication techniques of high-pressure oxidation (HIPOX) lightly doped drain (LDD) for both n and p channels, titanium self-aligned silicide (SALICIDE), and plasma-enhanced low-temperature oxide for intermetal dielectrics. The authors review the front-end process and elaborate on techniques involved in titanium salicide formation, the two-level metal process, and the temperature sensitivity of device parameters. In addition, high-performance circuits developed with this technology are demonstrated
Keywords :
CMOS integrated circuits; VLSI; digital integrated circuits; integrated circuit technology; metallisation; titanium compounds; 5 V; HIPOX; LDD; TiSi2 metallisation; custom VLSI applications; fabrication techniques; fifth-generation; front-end process; high-performance circuits; high-pressure oxidation; intermetal dielectrics; lightly doped drain; plasma-enhanced low-temperature oxide; salicide; submicrometer CMOS technology; submicron twin tub V technology; temperature sensitivity of device parameters; two-level metal; two-level metal process; CMOS technology; Dielectrics; Fabrication; Oxidation; Plasma applications; Plasma devices; Plasma temperature; Silicides; Titanium; Very large scale integration;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20930
