Title :
Lateral extension engineering using nitrogen implantation (N-tub) for high-performance 40-nm pMOSFETs
Author :
Momiyama, Y. ; Okabe, K. ; Nakao, H. ; Kase, M. ; Kojima, M. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Akiruno, Japan
Abstract :
Lateral extension engineering using a nitrogen-implantation (N-tub) process has enabled high performance 40-nm pMOSFETs that overcome the trade-off between drive current and short channel immunity. The data show that an N dose of above 1/spl times/10/sup 14/ cm/sup -2/ effectively suppresses B diffusion, especially in the lateral extension tail. As a result, we realized a 13% improvement in CV/I from conventional process.
Keywords :
MOSFET; ion implantation; leakage currents; nanotechnology; nitrogen; rapid thermal annealing; secondary ion mass spectra; 40 nm; B diffusion suppression; N implantation; NO-nitrided oxynitride gate insulator; RTA process; SIMS depth profiles; Si:N; drive current; gate leakage current; high-performance 40-nm pMOSFETs; junction leakage current; lateral extension engineering; short channel immunity; Fabrication; Hot carriers; Impurities; Isolation technology; Laboratories; Leakage current; MOSFETs; Nitrogen; Reliability engineering; Tail;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175922
