Title :
A 0.8 μm CMOS technology for high performance ASIC memory and channelless gate array
Author :
Liou, F.-T. ; Han, Y.P. ; Bryant, F. ; Miller, R. ; Chiu, S.W. ; Eng, L. ; Spinner, C. ; Zamanian, M. ; Klein, G. ; Barnes, J.
Author_Institution :
SGS-Thomson Microelectron., Carrollton, TX, USA
Abstract :
A generic 0.8-μm, polycide-gate, double-layer metal CMOS technology with twelve masking steps for next-generation memories and gate arrays has been developed. Key design rules and technology features are given. An I-line stepper is used for fine line definition down to the 0.7-μm region. The technology has been demonstrated with a full CMOS 16 K SRAM (static random-access memory) circuit. POP-SILO isolation, 175-A gate oxide, Ta polycide gate material, halo LDD (lightly doped drain) n and p devices, TiN/TiSi2 contact and barrier metal, partial etchback SOG (spin-on-glass) planarization, and Al/Ti metal systems provide high performance and reliable process technology
Keywords :
CMOS integrated circuits; VLSI; aluminium; cellular arrays; integrated circuit technology; integrated memory circuits; metallisation; random-access storage; semiconductor technology; tantalum compounds; titanium; titanium compounds; 16 kbits; 175 A; 700 to 800 nm; ASIC memory; Al-Ti metallisation; CMOS 16 K SRAM; CMOS technology; I-line stepper; POP-SILO isolation; TaSi2 polycide gate; TiN-TiSi2 contacts; channelless gate array; design rules; double-layer metal; fine line definition; halo LDD; high performance; next-generation memories; partial etchback SOG; planarization; polycide-gate; reliable process technology; spin-on-glass; submicron CMOS; technology features; twelve masking steps; Application specific integrated circuits; CMOS memory circuits; CMOS technology; Etching; Inorganic materials; Isolation technology; Materials reliability; Planarization; Random access memory; Tin;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20931
