Title :
AlGaN/GaN HEMTs on SiC operating at 40 GHz
Author :
Quay, R. ; Kiefer, R. ; Van Raay, E. ; Massler, H. ; Ramberger, S. ; Muller, S. ; Dammann, M. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G.
Author_Institution :
Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany
Abstract :
The operation of AlGaN/GaN HEMTs on SiC in the Ka-band is analyzed with respect to the achievable output power between 35 GHz and 40 GHz. 150 nm gate length AlGaN/GaN HEMTs are investigated by active load-pull measurements. Further, small-signal and noise analysis are performed with regard to the use at Ka-band and robust receiver applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; millimetre wave field effect transistors; millimetre wave measurement; millimetre wave power transistors; power HEMT; semiconductor device measurement; semiconductor device noise; silicon compounds; wide band gap semiconductors; 150 nm; 35 to 40 GHz; AlGaN-GaN-SiC; AlGaN/GaN/SiC; Ka-band; SiC; achievable output power; active load-pull measurements; gate length; noise analysis; power HEMTs; robust receiver applications; small-signal analysis; Aluminum gallium nitride; Gallium nitride; HEMTs; Length measurement; MODFETs; Noise robustness; Performance analysis; Power generation; Power measurement; Silicon carbide;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175928
