Ka-band 2.3W power AlGaN/GaN heterojunction FET

Author

Kasahara, K. ; Miyamoto, H. ; Ando, Y. ; Okamoto, Y. ; Nakayama, T. ; Kuzuhara, M.

Author_Institution

Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

677

Lastpage

680

Abstract

Describes the first successful watt-level Ka-band power operation of an AlGaN/GaN heterojunction FET fabricated on a SiC substrate. Taking the advantage of high breakdown voltage, high-current, and high-gain characteristics of the short-channel GaN-based FET, state-of-the-art high-power performance of >2W has been achieved at 30GHz from a single chip having a gate width of 0.36mm. The developed device with a gate length of 0.25/spl mu/m exhibited a linear gain of 8.8dB at 30GHz, indicating that the short-channel AlGaN/GaN FET is promising for a variety of high-power applications at Ka-band and above.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; silicon compounds; wide band gap semiconductors; 0.25 micron; 2.3 W; 30 GHz; 8.8 dB; AlGaN-GaN-SiC; AlGaN/GaN/SiC; Ka-band; SiC; breakdown voltage; gate width; heterojunction FET; high-gain characteristics; high-power applications; linear gain; microwave applications; Aluminum gallium nitride; FETs; Frequency; Gain; Gallium nitride; Heterojunctions; MMICs; Millimeter wave technology; Power generation; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175929

Filename

1175929