Title :
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT´s
Author :
Verzellesi, G. ; Pierobon, R. ; Rampazzo, F. ; Meneghesso, G. ; Chini, A. ; Mishra, U.K. ; Canali, C. ; Zanoni, E.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Universita di Modena e Reggio Emilia, Italy
Abstract :
Rf current collapse is investigated in AlGaN/GaN HEMT´s by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; hole traps; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; RF current collapse; dispersion effect; hole trap; numerical device simulation; polarization-induced charge; pulsed measurement; small-signal measurement; transient measurement; Aluminum gallium nitride; Current measurement; Dispersion; Gallium nitride; HEMTs; MODFETs; Numerical simulation; Polarization; Pulse measurements; Surface charging;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175932
