DocumentCode
3130722
Title
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT´s
Author
Verzellesi, G. ; Pierobon, R. ; Rampazzo, F. ; Meneghesso, G. ; Chini, A. ; Mishra, U.K. ; Canali, C. ; Zanoni, E.
Author_Institution
Dipt. di Ingegneria dell´´Informazione, Universita di Modena e Reggio Emilia, Italy
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
689
Lastpage
692
Abstract
Rf current collapse is investigated in AlGaN/GaN HEMT´s by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; hole traps; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; RF current collapse; dispersion effect; hole trap; numerical device simulation; polarization-induced charge; pulsed measurement; small-signal measurement; transient measurement; Aluminum gallium nitride; Current measurement; Dispersion; Gallium nitride; HEMTs; MODFETs; Numerical simulation; Polarization; Pulse measurements; Surface charging;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175932
Filename
1175932
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