Author :
Worledge, D. ; Annunziata, A.J. ; Brown, S. ; Chen, W. ; Harms, J. ; Hu, G. ; Kim, Y. ; Kothandaraman, C. ; Lauer, G. ; Lee, J. ; Liu, L. ; Murthy, S. ; Nowak, J. ; O´Sullivan, E. ; Park, J. ; Robertazzi, R. ; Sun, J.Z. ; Trouilloud, P.
Author_Institution :
IBM-Micron MRAM Alliance, Yorktown Heights, NY, USA
Abstract :
This talk presents the discovery of interface perpendicular anisotropy in the Ta-CoFeB-MgO system and its development for perpendicular magnetic tunnel junctions used in spin transfer torque magnetic random access memories. Experimental results show low switching current threshold and high efficiency. Theoretical predictions for further lowering of the switching current is also discussed.
Keywords :
MRAM devices; boron alloys; cobalt alloys; interface magnetism; iron alloys; magnesium compounds; magnetic tunnelling; perpendicular magnetic anisotropy; spin dynamics; tantalum; MRAM; Ta-CoFeB-MgO; interface perpendicular anisotropy; magnetic random access memories; perpendicular magnetic tunnel junctions; spin transfer torque; switching current threshold; Current measurement; Junctions; Random access memory; Switches; Temperature measurement; Torque; Voltage measurement;
