Title :
W-Band GaN MMIC with 842 mW output power at 88 GHz
Author :
Micovic, M. ; Kurdoghlian, A. ; Shinohara, K. ; Burnham, S. ; Milosavljevic, I. ; Hu, M. ; Corrion, A. ; Fung, A. ; Lin, R. ; Samoska, L. ; Kangaslahti, P. ; Lambrigtsen, B. ; Goldsmith, P. ; Wong, W.-S. ; Schmitz, A. ; Hashimoto, P. ; Willadsen, P.J. ; C
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
We report W-band GaN MMIC´s that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology, the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 μm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14 V.
Keywords :
MMIC amplifiers; gallium compounds; high electron mobility transistors; indium compounds; power amplifiers; GaN; InP HEMT; W-band GaN MMIC; W-band power module; frequency 88 GHz; gain 9.3 dB; power 842 mW; solid state technology; Frequency; Gain; Gallium nitride; HEMTs; Indium phosphide; MMICs; Multichip modules; Power generation; Semiconductor device measurement; Solid state circuits; GaN; MMIC; W-band; millimeter-wave; power amplifiers; solid state power amplifiers;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5516911
