Title :
Does source-to-drain tunneling limit the ultimate scaling of MOSFETs?
Author :
Jing Wang ; Lundstrom, M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
By using the non-equilibrium Green´s function approach, we report a comprehensive and rigorous study of source-to-drain tunneling in MOSFETs at the scaling limit. The dependence of source-to-drain tunneling on channel length, electrostatics, ambient temperature and scattering is examined, and the effects of source-to-drain tunneling on device characteristics and design issues are explored as well. The results show that source-to-drain tunneling does set an ultimate scaling limit but that this limit is well below 10 nm.
Keywords :
Green´s function methods; MOSFET; electrostatics; scattering; semiconductor device models; tunnelling; 10 nm; MOSFETs; ambient temperature; channel length; design issues; device characteristics; electrostatics; nonequilibrium Green´s function approach; scaling limit; scattering; source-to-drain tunneling; Degradation; Electrostatics; Equations; Green´s function methods; MOSFETs; Particle scattering; Potential well; Quantum mechanics; Temperature dependence; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175936
