DocumentCode
3130915
Title
An advanced high voltage CMOS process for custom logic circuits with embedded EEPROM
Author
Chang, K.Y. ; Cheng, Sunny ; Chang, Ko-Min ; Chalmers, Jim ; Swift, Craig ; Yeargain, John
Author_Institution
Motorola Inc., Austin, TX, USA
fYear
1988
fDate
16-19 May 1988
Abstract
An advanced high-voltage CMOS process has been developed for custom products with on-chip electrically erasable programmable read-only memory (EEPROM). The minimum feature size is 1.2 μm. Process adjustments to achieve >18-V high-voltage operation are explained in detail. Performance of short-channel transistors with L eff<1.0 μm is also described. The Motorola FETMOS EEPROM cell characteristics and reliability are discussed. Microprocessor chips with up to 68K bits of EEPROM have been fabricated using this process
Keywords
CMOS integrated circuits; PROM; integrated logic circuits; 1.2 micron; Motorola FETMOS; custom logic circuits; embedded EEPROM; feature size; high voltage CMOS process; on-chip electrically erasable programmable read-only memory; reliability; short-channel transistors; Annealing; CMOS process; EPROM; Implants; Logic circuits; Microprocessor chips; Programmable logic arrays; Temperature; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location
Rochester, NY
Type
conf
DOI
10.1109/CICC.1988.20934
Filename
20934
Link To Document