Title :
An advanced high voltage CMOS process for custom logic circuits with embedded EEPROM
Author :
Chang, K.Y. ; Cheng, Sunny ; Chang, Ko-Min ; Chalmers, Jim ; Swift, Craig ; Yeargain, John
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
An advanced high-voltage CMOS process has been developed for custom products with on-chip electrically erasable programmable read-only memory (EEPROM). The minimum feature size is 1.2 μm. Process adjustments to achieve >18-V high-voltage operation are explained in detail. Performance of short-channel transistors with L eff<1.0 μm is also described. The Motorola FETMOS EEPROM cell characteristics and reliability are discussed. Microprocessor chips with up to 68K bits of EEPROM have been fabricated using this process
Keywords :
CMOS integrated circuits; PROM; integrated logic circuits; 1.2 micron; Motorola FETMOS; custom logic circuits; embedded EEPROM; feature size; high voltage CMOS process; on-chip electrically erasable programmable read-only memory; reliability; short-channel transistors; Annealing; CMOS process; EPROM; Implants; Logic circuits; Microprocessor chips; Programmable logic arrays; Temperature; Threshold voltage; Transistors;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20934
