DocumentCode :
3130932
Title :
Quantitative assessment of slit mura defect in thin film transistor-liquid crystal display based on chromaticity and optical density
Author :
Tzu, Fu-Ming ; Chou, Jung-Hua
Author_Institution :
Dept. of Eng. Sci., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2009
fDate :
21-23 Oct. 2009
Firstpage :
373
Lastpage :
376
Abstract :
In this paper, we propose a creative non-contact automatic optical inspection (AOI) method for slit Mura measurements using a spectrometer and a photomultiplier tube (PMT). The experimental result indicate significant breakthrough of uniformity detection than typical macro CCD-based sensors and naked eyes, even the color difference is below the Just Noticeable Difference (JND) level. The characteristic of optical density (OD) is tended to be a concave curve; by contrast to chromaticity profile which shows a convex feature. Using the feature of chromaticity or optical density profiles across a slit Mura, the color difference from 0.12% to 2.71% in CIEy can be measured accurately. OD difference from 0.01 to 1.11 can be detected as well. Among of the samples, the most significant change is the 2.71% of CIEy chromatic variation versus a 1.1 OD difference along the slit Mura which is explored to quantity the JND´s perceptibility. A higher chromaticity corresponds to a higher transmittance and a lower optical density, and can be deduced accurately by the present method.
Keywords :
automatic optical inspection; liquid crystal displays; photomultipliers; spectrometers; thin film transistors; automatic optical inspection; chromaticity; optical density; photomultiplier tube; quantitative assessment; slit mura defect; spectrometer; thin film transistor-liquid crystal display; Automatic optical inspection; Density measurement; Displays; Eyes; Optical films; Optical sensors; Photomultipliers; Sensor phenomena and characterization; Spectroscopy; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4341-3
Electronic_ISBN :
978-1-4244-4342-0
Type :
conf
DOI :
10.1109/IMPACT.2009.5382196
Filename :
5382196
Link To Document :
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