Title :
Electrical characterization of fine-pitch compliant bumps
Author :
Lin, C.K. ; Chen, Chih ; Chang, Shyh-Ming ; An, Chao-Chyun ; Lee, Hsiao Ting ; Kao, Kuo-Shu ; Tsang, Jimmy ; Yang, Sheng-Shu
Author_Institution :
Dept. of Mech. Eng., Nat. Pingtung Univ. of Sci. & Technol., Pingtung, Taiwan
Abstract :
The electrical characterization of fine-pitch compliant Au bumps is investigated in this study. Compliant Au bumps of 20 microns pitch were fabricated on a glass substrate for chip-on-glass application. Kelvin probes are fabricated and employed to measure the bump resistance. The resistance ranges from 1.0 to 4.5 ohms, depending on process parameters. Current-carrying capability for these bumps is examined. Electromigration test is performed and it is found that the failure occurs in the wiring Al line on the glass substrate, indicating that the Au bumps have high electromigration resistance. The bump resistance is also measured during thermal cycling from 30 to 100°C, and the resistance increases less than 50% after 6 cycles. Aging test is also carried out at 60°C and 40 mA, and the failure time is 561 hours.
Keywords :
ageing; electrical resistivity; electromigration; failure (mechanical); gold; metallisation; Au; Kelvin probes; ageing test; bump resistance; chip-on-glass application; current 40 mA; current-carrying capability; electrical characterization; electromigration test; failure time; fine-pitch compliant bumps; glass electromigration resistance; glass substrate; size 20 mm; temperature 30 degC to 110 degC; thermal cycling; time 561 h; wiring line; Electric resistance; Electrical resistance measurement; Electromigration; Glass; Gold; Kelvin; Probes; Semiconductor device measurement; Testing; Thermal resistance;
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4341-3
Electronic_ISBN :
978-1-4244-4342-0
DOI :
10.1109/IMPACT.2009.5382201