Sub 5 ps SiGe bipolar technology

Author

Bock, J. ; Schafer, H. ; Knapp, H. ; Zoschg, D. ; Aufinger, K. ; Wurzer, M. ; Boguth, S. ; Rest, M. ; Schreiter, R. ; Stengl, R. ; Meister, T.F.

Author_Institution

Infineon Technol., Munich, Germany

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

763

Lastpage

766

Abstract

A SiGe bipolar technology for mixed digital and analog RF applications is presented. Balanced device performance is achieved with a transit frequency f/sub T/ of 155 GHz at a collector emitter breakdown voltage BV/sub CEO/ of 1.9 V, a maximum oscillation frequency f/sub max/ of 167 GHz, and 4.7 ps ring oscillator gate delay. With a 99 GHz dynamic frequency divider and a 19 GHz LNA with 2.2 dB noise figure state-of-the-art results for high-speed digital and analog applications are demonstrated.

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar integrated circuits; delays; frequency dividers; high-speed integrated circuits; low-power electronics; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; semiconductor device breakdown; semiconductor materials; 1.9 V; 155 GHz; 167 GHz; 19 GHz; 2.2 dB; 4.7 ps; 99 GHz; LNA; SiGe; balanced device performance; bipolar technology; collector emitter breakdown voltage; dynamic frequency divider; high-speed ICs; maximum oscillation frequency; mixed digital/analog RF applications; ring oscillator gate delay; transit frequency; Boron; Circuits; Delay; Doping profiles; Frequency conversion; Germanium silicon alloys; Noise figure; Ring oscillators; Silicon germanium; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175950

Filename

1175950