Title :
SiGe HBTs with cut-off frequency of 350 GHz
Author :
Rieh, J.-S. ; Jagannathan, B. ; Chen, H. ; Schonenberg, K.T. ; Angell, D. ; Chinthakindi, A. ; Florkey, J. ; Golan, F. ; Greenberg, D. ; Jeng, S.J. ; Khater, M. ; Pagette, F. ; Schnabel, C. ; Smith, P. ; Stricker, A. ; Vaed, K. ; Volant, R. ; Ahlgren, D.
Author_Institution :
IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; 350 GHz; SiGe; SiGe HBT; bipolar transistor; cut-off frequency; Art; Artificial intelligence; Bipolar transistors; Boron; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Radio frequency; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175952
