Author :
Knoll, D. ; Ehwald, K.E. ; Heinemann, B. ; Fox, A. ; Blum, K. ; Rücker, H. ; Furnhammer, F. ; Senapati, B. ; Barth, R. ; Haak, U. ; Höppner, W. ; Drews, J. ; Kurps, R. ; Marschmeyer, S. ; Richter, H.H. ; Grabolla, T. ; Kuck, B. ; Fursenko, O. ; Schley, P.
Abstract :
We demonstrate an extremely simple, flexible, and hence low-cost SiGe:C BiCMOS process with ample performance for the majority of high volume applications. This technology offers three HBT devices with f/sub T//BV/sub CEO/ values of 28 GHz/67 GHz/7.5 V; 52 GHz/98 GHz/3.8 V; and 75 GHz/ 90 GHz/2.4 V by adding only one mask to the underlying CMOS process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; integrated circuit reliability; masks; semiconductor device breakdown; semiconductor materials; 2.4 to 7.5 V; 28 to 98 GHz; BiCMOS process; SiGe; SiGe:C; high volume applications; mask; one-mask HBT module; speed/breakdown voltages; underlying CMOS process; Artificial intelligence; BiCMOS integrated circuits; CMOS process; CMOS technology; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Lithography; Silicon germanium;
