Noise performance of a low base resistance 200 GHz SiGe technology

Author

Greenberg, D.R. ; Jagannathan, B. ; Sweeney, S. ; Freeman, G. ; Ahlgren, D.

Author_Institution

IBM Microelectron. Semicond. Res. & Dev. Center (SRDC), Hopewell Junction, NY, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

787

Lastpage

790

Abstract

Emerging applications beyond 10 GHz will demand silicon technologies capable of achieving good noise performance out to high frequencies. In this work, we characterize for the first time noise in a 200 GHz SiGe technology out to 26 GHz, demonstrating the benefits of high f/sub T/ and low R/sub B/. We report 10, 20 and 26 GHz F/sub min/ in values of 0.4, 1.33 and 1.5 dB, respectively, with associated gains of 15, 11 and 9 dB. Further, we present the results of an experimental variant of the process with 31% lower RB and which further reduces F/sub min/ by up to 0.4 dB. Our results reveal the potential of 200 GHz SiGe for low noise operation out to high frequencies.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; bipolar MMIC; integrated circuit noise; semiconductor materials; system-on-chip; 0.4 to 1.5 dB; 10 to 26 GHz; 200 GHz; 9 to 15 dB; BiCMOS; SiGe; base resistance; bipolar-based processes; noise performance; system-on-a-chip applications; wireless design; Frequency; Germanium silicon alloys; Local area networks; Manufacturing; Microelectronics; Noise figure; Research and development; Semiconductor device noise; Silicon germanium; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175956

Filename

1175956