Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

Author

Jones, R.E. ; Thomas, S.G. ; Bharatan, S. ; Thoma, R. ; Jasper, C. ; Zirkle, T. ; Edwards, N.V. ; Liu, R. ; Wang, X.D. ; Xie, Q. ; Rosenblad, C. ; Ramm, J. ; Iselle, G. ; von Kanel, H. ; Oh, J. ; Campbell, J.C.

Author_Institution

DigitalDNA Labs., Motorola, Austin, TX, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

793

Lastpage

796

Abstract

Photodetectors were fabricated in a heteroepitaxial Ge-on-Si deposited by low energy plasma enhanced CVD. Dark current density of 4.6 nA//spl mu/m, 49 % quantum efficiency, and a -3 dB bandwidth of 3.5 GHz were measured at 1.3 /spl mu/m wavelength and -3 V bias. Numerical simulations predict device modifications can achieve 10 Gbps (/spl cong/ 7 GHz) bandwidth.

Keywords

Ge-Si alloys; dark conductivity; elemental semiconductors; germanium; optical receivers; photodetectors; plasma CVD; silicon; -3 V; -3 dB bandwidth; 1.3 micron; 10 Gbit/s; 3.5 GHz; 49 percent; 7 GHz; Ge-SiGe-Si; Ge-on-Si; dark current density; device modifications; fiber optics communications receivers; gigahertz photodetectors; graded buffer layer; low energy plasma enhanced CVD; quantum efficiency; Bandwidth; Buffer layers; Dark current; Fabrication; Photodetectors; Plasma density; Plasma devices; Plasma measurements; Plasma simulation; Plasma waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175957

Filename

1175957