DocumentCode
3131249
Title
A novel silicon Geiger-mode avalanche photodiode
Author
Jackson, J.C. ; Morrison, A.P. ; Phelan, D. ; Mathewson, A.
Author_Institution
Nat. Microelectron. Res. Centre, Cork, Ireland
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
797
Lastpage
800
Abstract
Dark count nonlinearity in CMOS compatible, single photon counting, Geiger-mode avalanche photodiodes (GM-APD) has been investigated. A novel structure was designed, fabricated, and characterized to allow dark count optimization. Dark count levels for the proposed structure are shown to scale linearly with area.
Keywords
avalanche photodiodes; elemental semiconductors; photodetectors; silicon; Geiger-mode APD; Si; Si avalanche photodiodes; dark count nonlinearity; dark count optimization; single photon counting; Avalanche photodiodes; Biosensors; CMOS process; CMOS technology; Detectors; Electric breakdown; Fluorescence; Optical signal processing; Silicon; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175958
Filename
1175958
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