Highly linear InP phase modulator for high dynamic range RF/photonic links

Author

Wang, Renyuan ; Bhardwaj, Ashish ; Ristic, Sasa ; Coldren, Larry ; Bowers, John ; Herczfeld, Peter ; Li, Yifei

Author_Institution

Univ. of Massachusetts at Dartmouth, Dartmouth, MA, USA

fYear

2010

fDate

23-28 May 2010

Firstpage

732

Lastpage

735

Abstract

The optical phase locked loop (OPLL) photonic integrated circuit (PIC) is a key element for the emerging linear coherent RF-photonic links. One of the main challenges for the OPLL-PIC is the nonlinearity of the Indium Phosphide (InP)-based phase modulator. In this paper, we report the experimental results from a multi-quantum well phase modulator fabricated on an InP substrate that is specially designed for the OPLL-PIC. The phase modulator shows low optical loss and good linearity performance. In particular, at a reverse bias voltage of 5.6 V, its phase IP3 and insertion loss per unit length are ~2.8 π/mm and 1.2 dB/mm, respectively.

Keywords

III-V semiconductors; indium compounds; integrated optics; optical communication equipment; optical links; optical modulation; optical phase locked loops; phase modulation; semiconductor quantum wells; InP; RF-photonic links; dynamic range; optical phase locked loop; photonic integrated circuit; quantum well phase modulator; voltage 5.6 V; Dynamic range; Indium phosphide; Integrated optics; Linearity; Optical losses; Optical modulation; Phase locked loops; Phase modulation; Photonic integrated circuits; Radio frequency; dynamic range; linear phase modulator; optical phase locked loop; quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5516939

Filename

5516939