DocumentCode
3131508
Title
Room Temperature InGaSb Quantum Well Microcylinder Lasers at 2 μm Grown Monolithically on a Silicon Substrate
Author
Yang, T. ; Balakrishnan, G. ; Lu, L. ; Shin, Min-Ho ; O´Brien, J.D. ; Huffaker, D.L.
Author_Institution
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA
fYear
2006
fDate
Oct. 29 2006-Nov. 2 2006
Firstpage
731
Lastpage
732
Abstract
Room-temperature photopumped lasing operation near 2.0mum is reported from III-Sb microcylinders grown monolithically on silicon. High quality epitaxy is enabled by an interfacial misfit array. Growth, fabrication and device characterization is discussed
Keywords
III-V semiconductors; epitaxial growth; gallium compounds; indium compounds; laser beams; optical fabrication; optical pumping; quantum well lasers; silicon; 2 micron; InGaSb; InGaSb quantum well microcylinder laser; Si; device characterization; device fabrication; epitaxy; photopumped lasing operation; silicon substrate; Dry etching; Electrons; Epitaxial growth; Optical scattering; Photoconductivity; Quantum computing; Quantum well lasers; Silicon; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9556-5
Type
conf
DOI
10.1109/LEOS.2006.278940
Filename
4054392
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