Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

Author

Koyama, Masanori ; Kaneko, A. ; Ino, T. ; Koike, M. ; Kamata, Y. ; Iijima, R. ; Kamimuta, Y. ; Takashima, A. ; Suzuki, M. ; Hongo, C. ; Inumiya, S. ; Takayanagi, M. ; Nishiyama, A.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

849

Lastpage

852

Abstract

The effects of the nitrogen in the HfSiON gate dielectric on the electrical and thermal properties of the dielectric were investigated. It is clearly demonstrated that nitrogen enhances the dielectric constant of silicates. High dielectric constants of the HfSiON are maintained and boron penetration is substantially suppressed in the HfSiON during high temperature annealing. These properties are ascribed to the homogeneity of the bond structure in the film containing nitrogen through high temperature annealing.

Keywords

MOS capacitors; annealing; bonds (chemical); dielectric thin films; hafnium compounds; nitrogen; permittivity; silicon compounds; sputtered coatings; thermal stability; 1000 C; Au-HfSiON-Si; Au/HfSiON/p-Si capacitors; HfSiON gate dielectric; Si-HfSiON-Si; bond structure homogeneity; boron penetration suppression; co-sputtering; dielectric constant enhancement; electrical characteristics; high temperature annealing; nitrogen effects; poly-Si/HfSiON/Si stack; thermal characteristics; thermal stability; Annealing; Bonding; Boron; Dielectric constant; High K dielectric materials; High-K gate dielectrics; Nitrogen; Polarization; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175970

Filename

1175970