Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode

Author

Choi, C.H. ; Rhee, S.J. ; Jeon, T.S. ; Lu, N. ; Sim, J.H. ; Clark, R. ; Niwa, M. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

857

Lastpage

860

Abstract

In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C/sub 16/H/sub 40/N/sub 4/Hf) and NH/sub 3/ remain amorphous after 900/spl sim/950/spl deg/C annealing. Compared to HfO/sub 2/, HfOxNy exhibits reduced leakage current by 2/spl sim/3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.

Keywords

CVD coatings; MOSFET; annealing; dielectric thin films; hafnium compounds; leakage currents; thermal stability; 900 to 950 degC; HfO/sub x/N/sub y/ CVD film; HfON; MOSFET; Si; boron penetration; equivalent oxide thickness; high temperature annealing; high-K gate dielectric; leakage current; reliability; self-aligned poly-Si gate electrode; thermal stability; Annealing; Boron; Crystallization; Dielectrics; Electrodes; Hafnium oxide; MOSFETs; Nitrogen; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175972

Filename

1175972