Title :
Ultra-thin (Teffinv = 1.7 nm) poly-Si-gated SiN/HfO2/SiON high-k stack dielectrics with high thermal stability (1050/spl deg/C)
Author :
Morisaki, Y. ; Aoyama, T. ; Sugita, Y. ; Irino, K. ; Sugii, T. ; Nakamura, T.
Author_Institution :
Fujitsu Labs. Ltd., Tokyo, Japan
Abstract :
Demonstrated the high-performance and high-reliability of ultra-thin poly-Si-gated SiN/HfO/sub 2//SiON high-k stack dielectrics. A SiN layer deposited on HfO/sub 2/ is shown to be indispensable to the suppression of the reaction of poly-Si and HfO/sub 2/, resulting in high thermal stability (1050/spl deg/C). This thermally stable SiN/HfO/sub 2//SiON structure can achieve an ultrathin oxide thickness of T/sub eff//sup inv/ (effective oxide thickness measured in strong inversion region) for 1.7 nm, which is less than 1 nm for EOT. A low leakage current of 5 to 6 orders of magnitude lower than that of SiO/sub 2/ was observed. In addition, this thermal stability can lead to high reliability, which includes TDDB and hot electron integrity.
Keywords :
MOSFET; dielectric thin films; elemental semiconductors; hafnium compounds; hot carriers; inversion layers; leakage currents; semiconductor device breakdown; semiconductor device reliability; silicon compounds; thermal stability; 1.7 nm; 1050 degC; MOSFETs; Si-SiN-HfO/sub 2/-SiON; Si/SiN/HfO/sub 2//SiON; TDDB; gate dielectric films; high-k stack dielectrics; hot electron integrity; inversion region; leakage current; reliability; thermal stability; ultrathin oxide thickness; Dielectric substrates; Diodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon compounds; Temperature; Thermal stability; Voltage;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175973
