DocumentCode
3131602
Title
W-band GaN MMIC with 842 mW output power at 88 GHz
Author
Micovic, M. ; Kurdoghlian, A. ; Shinohara, K. ; Milosavljevic, I. ; Burnham, S.D. ; Hu, Minglie ; Corrion, A.L. ; Wong, William S. ; Schmitz, A. ; Hashimoto, P.B. ; Willadsen, P.J. ; Chow, D.H. ; Fung, Andy ; Lin, R.H. ; Samoska, Lorene ; Kangaslahti, Pek
Author_Institution
HRL Laboratories, Malibu, United States
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
We report W-band GaN MMIC´s that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology[1], the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 µm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14 V.
Keywords
Frequency; Gain; Gallium nitride; HEMTs; Indium phosphide; MMICs; Multichip modules; Power generation; Semiconductor device measurement; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5516955
Filename
5516955
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