Characterization of 2D dopant profile in L/sub eff/ /spl sim/ 20 nm MOSFETs by inverse modeling with precise /spl part/C//spl part/V, /spl part/V/sub th///spl part/V-L measurement

Author

Tanaka, Takuji ; Tagawa, Yukio ; Satoh, Shigeo ; Sugii, Toshihiro

Author_Institution

Fujitsu Labs. Ltd., Tokyo, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

887

Lastpage

890

Abstract

Developed an inverse modeling technique to characterize two dimensional dopant profiles of MOSFETs with a sub-50 nm gate length. We have found precisely measured /spl part/C//spl part/V, /spl part/V/sub th///spl part/V-L data are systematically related to 2D dopant profiles. Our new approach enables us to reproduce detailed characteristics of short channel effects (V/sub th/ rolloff, S-factor rollup, DIBL increase), I-V, C-V, and I/sub on/-I/sub off/ down to L/sub eff/ /spl sim/ 20 nm.

Keywords

MOSFET; characteristics measurement; doping profiles; semiconductor device measurement; semiconductor device models; semiconductor process modelling; 20 to 50 nm; C-V characterization; I-V characterization; MOSFETs; S-factor rollup; inverse modeling; short channel effects; two dimensional dopant profiles; Capacitance; Capacitance-voltage characteristics; Convergence; Data mining; Inverse problems; MOSFET circuits; Robustness; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175979

Filename

1175979