• DocumentCode
    3131829
  • Title

    Carbon nano tubes grown on glass substrate with different interface layer

  • Author

    Chang, Shang-Chou ; Li, To-Sing ; Lin, Tien-Chai ; Lee, Jian-Hua

  • Author_Institution
    Dept. of Electr. Eng., Kun Shan Univ., Tainan, Taiwan
  • fYear
    2009
  • fDate
    21-23 Oct. 2009
  • Firstpage
    561
  • Lastpage
    564
  • Abstract
    Microwave plasma enhanced chemical vapor deposition (MPECVD) was applied in growing carbon nano tubes (CNTs) on sodium free glass with different interface layer materials. Surface morphology and field emission characteristics of as grown CNTs were measured. Three different materials: titanium(Ti), gold(Au) and indium tin oxide (ITO) thin films were prepared on glass first as the interface role between CNTs and glass. Nickel(Ni) films were sputtered on three different interface films and also direct on glass. After hydrogen plasma pretreatment on nickel films, CNTs were tried to grow on four kinds of glass combination: Ni/glass, Ni/ITO/glass, Ni/Au/glass and Ni/Ti/glass, three substrate temperatures: unheated, 300°C and 500°C, with the mixture of methane and hydrogen microwave plasma. It was found CNTs can be grown with high CNTs density, high adhesion and 2.5 V/¿ m turn on electric field corresponding to Ni/Ti/glass and 500°C process condition. The same MPECVD system with same pretreatment and process gas can be used to grow CNTs on silicon substrate without extra substrate heating. It is proposed the electrical conductivity of substrate has strong influence on CNTs growth. The interface material like Ti can modify the electrical conductivity of the substrate surface.
  • Keywords
    adhesion; buffer layers; carbon nanotubes; electrical conductivity; field emission; glass; gold; indium compounds; nickel; plasma CVD; substrates; surface morphology; titanium; Ni-Au-Jk; Ni-ITO-Jk; Ni-Jk; Ni-Ti-Jk; adhesion; carbon nanotubes; electrical conductivity; field emission characteristics; glass substrate; gold thin film; hydrogen plasma pretreatment; indium tin oxide thin film; microwave plasma enhanced chemical vapor deposition; sodium free glass; substrate temperature; surface morphology; temperature 293 K to 298 K; temperature 300 C; temperature 500 C; titanium thin film; Carbon dioxide; Electromagnetic heating; Glass; Indium tin oxide; Nickel; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Surface morphology; Cabon nano tubes; glass substrate; interface layer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-4341-3
  • Electronic_ISBN
    978-1-4244-4342-0
  • Type

    conf

  • DOI
    10.1109/IMPACT.2009.5382244
  • Filename
    5382244