Title :
A CMOS magnetic latch with extremely high resolution
Author :
Li, Z.Q. ; Sun, X.W.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A novel CMOS magnetic latch with extremely high magnetic resolution based on a single split-drain magnetic field-effect transistor is reported. The minimum detectable magnetic flux density is less than 4 /spl mu/T. The resolution for magnetic pattern recognition is less than 2 mT. The breakthrough has been achieved by importing a positive feedback.
Keywords :
MOSFET; magnetic field measurement; magnetic sensors; pattern recognition; CMOS magnetic latch; magnetic field sensor; magnetic flux detection; magnetic pattern recognition; magnetic resolution; positive feedback; split-drain magnetic field-effect transistor; FETs; Latches; Magnetic devices; Magnetic fields; Magnetic flux; Magnetic flux density; Magnetic sensors; Saturation magnetization; Sensor arrays; Spatial resolution;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175984
