Title :
Characterizations of InGaN/GaN MQWs with different growth parameters
Author :
Leung, K.K. ; Fong, W.K. ; Surya, C.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Hong Kong, China
Abstract :
We investigated the effects of the growth parameters on the microstructural, optoelectronic and low-frequency noise properties of InGaN/GaN multiple quantum well (MQW). Dc current stress was applied to the devices and their degradations were investigated as a function of the stress time.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; semiconductor device noise; semiconductor growth; semiconductor quantum wells; stress effects; wide band gap semiconductors; InGaN-GaN; LED; MOCVD; dc current stress; light emitting diodes; low-frequency noise; metalorganic chemical vapor deposition; microstructural property; multiple quantum well growth; optoelectronic property; Capacitive sensors; Degradation; Gallium nitride; Image resolution; Light emitting diodes; Low-frequency noise; Photonics; Quantum well devices; Spirals; Stress;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5220553
