A 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size using 90 nm flash technology

Author

Dong-Chan Kim ; Wang-Chul Shin ; Jae-Duk Lee ; Jin-Hyun Shin ; Joon-Hee Lee ; Sung-Hoi Hur ; Ihn-Gee Baik ; Yoo-Choel Shin ; Chang-Hyun Lee ; Jae-Sun Yoon ; Heon-Guk Lee ; Kwon-Soon Jo ; Seung-Wook Choi ; Byung-Kwan You ; Jeong-Hyuk Choi ; Donggun Park ;

Author_Institution

Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

919

Lastpage

922

Abstract

A manufacturable 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size, which is the smallest cell size ever reported in semiconductor memory, is successfully developed with 90 nm NAND flash technology for high density file storage application. The three main key technology features of 90 nm NAND flash technology are advanced KrF lithography with off-axis illumination system equipped with a dipole aperture, reduced stack height of cell, and optimized gate reoxidation affecting tunnel oxide profile.

Keywords

NAND circuits; cellular arrays; circuit optimisation; flash memories; ultraviolet lithography; 2 Gbit; 90 nm; KrF; NAND flash memory; advanced KrF lithography; cell size; dipole aperture; flash technology; high density file storage; optimized gate reoxidation; photolithography; semiconductor memory; stack height; tunnel oxide profile; Apertures; Digital audio players; Digital cameras; Flash memory; Lighting; Lithography; Nonvolatile memory; Resists; Semiconductor device manufacture; Semiconductor memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175986

Filename

1175986