Title :
Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures
Author :
Ruzyllo, J. ; Lee, D.-O. ; Roman, P. ; Horn, M. ; Mumbauer, P. ; Brubaker, M. ; Grant, R.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
This paper reviews results of an investigation of electrical characteristics and selected fundamental material properties of several high-k metal oxides considered for MOS gate applications. The metal oxide films were deposited using the LSMCD (liquid source misted chemical deposition) method in a cluster tool. The method produces high quality films as thin as 3 nm and offers the flexibility of switching between various chemistries. Among compositions studied, mist-deposited oxides of Hf and Zr as well as SrTa2O6 were found to display promising characteristics for MOS gate applications, with the last showing superior thermal stability with silicon
Keywords :
CMOS integrated circuits; MOSFET; cluster tools; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; liquid phase deposition; oxidation; permittivity; thermal stability; HfO; LSMCD; LSMCD flexibility; MOS gate applications; MOS gate structures; SrTa2O6; ZrO; cluster tool; electrical characteristics; film quality; fundamental material properties; high-k dielectrics; high-k metal oxides; liquid source misted chemical deposition; metal oxide films; mist-deposited Hf oxides; mist-deposited Zr oxides; process chemistries; silicon; thermal stability; Chemicals; Chemistry; Dielectric liquids; Displays; Electric variables; Hafnium; High K dielectric materials; High-K gate dielectrics; Material properties; Zirconium;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI
Conference_Location :
Munich
Print_ISBN :
0-7803-6555-0
DOI :
10.1109/ASMC.2001.925619
