DocumentCode
3131953
Title
PHINES: a novel low power program/erase, small pitch, 2-bit per cell flash memory
Author
Yeh, C.C. ; Tsai, W.J. ; Liu, M.I. ; Lu, T.C. ; Cho, S.K. ; Lin, C.J. ; Tahui Wang ; Pan, S. ; Chih-Yuan Lu
Author_Institution
Silicon Lab., Macronix Int. Co. Ltd., Hsin-Chu, Taiwan
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
931
Lastpage
934
Abstract
A novel flash memory cell named PHINES (Programming by hot Hole Injection Nitride Electron Storage) is proposed. PHINES uses a nitride trapping storage cell structure, and channel FN erase is performed to raise Vt while programming is done by lowering local Vt through band-to-band hot hole injection. Two physical bits storage, low power P/E, high endurance, good retention and high scaling capability are achieved.
Keywords
flash memories; hot carriers; low-power electronics; PHINES; band-to-band hot hole injection; device scaling; endurance characteristics; flash memory; low power program/erase; nitride trapping storage cell; retention characteristics; Channel hot electron injection; Electron traps; Electronics industry; Fabrication; Flash memory; Flash memory cells; Hot carriers; Industrial electronics; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175989
Filename
1175989
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