DocumentCode
3131961
Title
Status and promise of InP electronics
Author
Mishra, Umesh K.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1995
fDate
9-13 May 1995
Firstpage
7
Lastpage
9
Abstract
The paper addresses InP based electronics in the context of a cost-viable solution to pressing needs. Available InP based technologies are discussed including InP-based HEMT, InP-based HBT, and merged technologies of HEMTs, HBTs and RTDs
Keywords
III-V semiconductors; economics; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; resonant tunnelling diodes; reviews; semiconductor device manufacture; technological forecasting; InP; InP based technologies; InP electronics; InP-based HBT; InP-based HEMT; RTD; cost-viable solution; Consumer electronics; Cutoff frequency; Electron mobility; HEMTs; Indium gallium arsenide; Indium phosphide; Laboratories; Ohmic contacts; Photonic band gap; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522062
Filename
522062
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