• DocumentCode
    3131985
  • Title

    A practical PZT dry etching process that increases the top electrode contact reliability in pyroelectric detector arrays by using a MORITM high density plasma system

  • Author

    Thomas, D.J. ; Song, Y.P. ; Powell, K. ; Bruchhaus, R.

  • Author_Institution
    Trikon Technol., Newport, UK
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    81
  • Lastpage
    83
  • Abstract
    This paper describes a practical dry etching process for PZT. Results are presented that demonstrate a high rate, fence-free process that can be applied to thick PZT layers such as those used in pyroelectric detector arrays. The process relies upon the use of a MORI high density plasma system. When used in combination with a subsequent wet etch, it is possible to significantly improve the capacitor definition and maintain selectivity to the Pt electrode. The combined process results in an improvement in the reliability of the top electrode contact of such devices
  • Keywords
    arrays; electrical contacts; electrodes; ferroelectric capacitors; infrared detectors; lead compounds; plasma materials processing; pyroelectric detectors; semiconductor device metallisation; sputter etching; MORI high density plasma system; PZT; PZT dry etching process; PbZrO3TiO3; Pt; capacitor definition; dry etching process; etch selectivity; fence-free process; pyroelectric detector arrays; reliability; thick PZT layers; top electrode contact; top electrode contact reliability; wet etch; Detectors; Dry etching; Electrodes; Magnetooptic recording; Plasma applications; Plasma density; Plasma devices; Pyroelectricity; Sensor arrays; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI
  • Conference_Location
    Munich
  • ISSN
    1078-8743
  • Print_ISBN
    0-7803-6555-0
  • Type

    conf

  • DOI
    10.1109/ASMC.2001.925621
  • Filename
    925621