Title :
High temperature operation of AlGaInAs/InP lasers
Author :
Zah, C.E. ; Bhat, R. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
We discuss the design of uncooled lasers which minimizes the change in both threshold current and slope efficiency over the temperature range from -40 to 85°C. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the AlxGayIn1-x-yAs/InP material system instead of the conventional GaxIn1-xAsyP1-y/InP material system. Experimentally, the AlxGayIn1-x-y As/InP strained quantum well lasers show superior high temperature performances such as a small drop of 0.3 dB in slope efficiency when the heat sink temperature changes from 25 to 100°C, a maximum CW operation temperature of 185°C, a thermally-limited 3-dB bandwidth of 13.9 GHz at 85°C, and a mean-time-to-failure of 33 years at 100°C and 10 mW output power
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heat sinks; indium compounds; laser reliability; optical transmitters; quantum well lasers; -40 to 85 degC; 10 mW; 13.9 GHz; 185 degC; 25 to 100 degC; 33 y; AlxGayIn1-x-yAs/InP strained quantum well lasers; AlGaInAs-InP; AlGaInAs/InP lasers; CW operation temperature; carrier overflow; design; electron confinement energy; heat sink temperature; high temperature operation; high temperature performances; high-temperature operation; mean-time-to-failure; output power; slope efficiency; temperature range; thermally-limited 3-dB bandwidth; threshold current; uncooled lasers; Carrier confinement; Electrons; Indium phosphide; Laser transitions; Optical design; Optical materials; Power lasers; Quantum well lasers; Temperature distribution; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522064
