Title :
ESD protection structure issues and design for custom integrated circuits
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
Three electrostatic discharge (ESD) models are examined: the human body model, the charged-device model, and the machine model. Basic principles and operation of integrated circuit device protection are presented. The three common ESD failure mechanisms, conductor fusing, junction spiking, and dielectric breakdown are described. Protection structure requirements are discussed, and an optimized structure for CMOS is presented
Keywords :
electrostatics; failure analysis; monolithic integrated circuits; CMOS; charged-device model; conductor fusing; custom integrated circuits; dielectric breakdown; electrostatic discharge; failure mechanisms; human body model; junction spiking; machine model; protection structure issues; Application specific integrated circuits; Assembly; Biological system modeling; Computational geometry; Electrostatic discharge; Inductance; Integrated circuit reliability; Packaging; Protection; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20942
