DocumentCode
3132045
Title
ESD protection structure issues and design for custom integrated circuits
Author
Avery, L.R.
Author_Institution
David Sarnoff Res. Center, Princeton, NJ, USA
fYear
1988
fDate
16-19 May 1988
Abstract
Three electrostatic discharge (ESD) models are examined: the human body model, the charged-device model, and the machine model. Basic principles and operation of integrated circuit device protection are presented. The three common ESD failure mechanisms, conductor fusing, junction spiking, and dielectric breakdown are described. Protection structure requirements are discussed, and an optimized structure for CMOS is presented
Keywords
electrostatics; failure analysis; monolithic integrated circuits; CMOS; charged-device model; conductor fusing; custom integrated circuits; dielectric breakdown; electrostatic discharge; failure mechanisms; human body model; junction spiking; machine model; protection structure issues; Application specific integrated circuits; Assembly; Biological system modeling; Computational geometry; Electrostatic discharge; Inductance; Integrated circuit reliability; Packaging; Protection; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location
Rochester, NY
Type
conf
DOI
10.1109/CICC.1988.20942
Filename
20942
Link To Document