Effect of (GaP)m/(InP)m short period binary superlattice period on quantum wire formation by strain induced lateral layer ordering in GaInP/AlInP multi-quantum-wire lasers

Optical anisotropy of the GaInP/AlInP compressively strained multi-quantum wire lasers fabricated by the strain induced lateral layer ordering process in (GaP)_m(InP)_m short period binary superlattice layers, which is a very effective method to fabricate GaInP/AlInP compressively strained quantum wire lasers through gas source molecular beam epitaxy, was investigated systematically by changing (GaP)_m/(InP), superlattice period (i.e. monolayer number m). A drastic reduction in threshold current density (J_th ) was obtained at m of 1.5 and anisotropic lasing characteristics were intensified with increasing m values. Moreover the low J_th value of 278A/cm² was obtained at m of 1.5 ML with a cavity length of 794 μm