• DocumentCode
    3132087
  • Title

    InP-based MIR Avalanche Photodiodes: Current Status and Future Prospects

  • Author

    Holmes, Archie L.

  • Author_Institution
    Texas Univ., Austin, TX
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    785
  • Lastpage
    786
  • Abstract
    Our research goal is to develop InP-based devices as an alternative to QWIPs and HgCdTe for MIR detection. The approach we have pursued for longer wavelength detection on InP is a type-II superlattice consisting of GaxIn1-xAs and GaAsySb 1-y alloys. These structures provide two advantages for MIR detection: large (greater than 700 meV) direct band-gaps, which should lead to a lower thermal carrier generation rate and the ability to adjust the detection wavelength by changing the compositions of GaInAs and GaAsSb and their thickness in the superlattice
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor superlattices; GaxIn1-xAs; GaAsySb1-y; InP; InP-based MIR avalanche photodiode; band-gap; thermal carrier generation rate; type-II superlattice; Absorption; Avalanche photodiodes; Chemical industry; Chemical processes; Dark current; Detectors; Indium phosphide; PIN photodiodes; Superlattices; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9555-7
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.279002
  • Filename
    4054419
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3132087