Excess Noise and Avalanche Multiplication in InAlAs

Author

Goh, Y.L. ; Massey, D.J. ; Marshall, A.R.J. ; Ng, J.S. ; Tan, C.H. ; Hopkinson, M. ; David, J.P.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield

fYear

2006

fDate

Oct. 2006

Firstpage

787

Lastpage

788

Abstract

We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p⁺-i-n ⁺ and n⁺-i-p⁺ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique

Keywords

III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; indium compounds; p-i-n diodes; semiconductor device breakdown; semiconductor device noise; InAlAs; avalanche multiplication; carrier threshold energy; coupled integral equation; electron-initiated multiplication; excess noise characteristics; hole-initiated multiplication; ionization coefficient; n-i-p diodes; p-i-n diodes; Analytical models; Avalanche photodiodes; Charge carrier processes; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Ionization; Signal to noise ratio; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.279003

Filename

4054420