Title :
Epitaxial SrTiO3 on silicon with EOT of 5.4 /spl Aring/ for MOS gate dielectric applications
Author :
Sanghun Jeon ; Walker, Frederick J. ; Billman, Curtis A. ; McKee, Rodney A. ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
We report on the electrical characteristics of epitaxially grown SrTiO/sub 3/ on p-Si[100] by molecular beam epitaxy (MBE). For 100 /spl Aring/-thick SrTiO/sub 3/ films, the equivalent oxide thickness (EOT) and leakage current density are 5.4 /spl Aring/ and 0.7 mA/cm/sup 2/(@Vg = V/sub FB/-1 V), respectively. Dispersion and hysteresis characteristics are negligible. As deposited samples show relatively high fixed oxide charge density and interface state density which might be explained by incomplete oxidation of the metal layer. Low temperature (< 450/spl deg/C) post-metal forming gas annealing (FGA) which can passivate dangling bonds, significantly reduces the interface state density and fixed oxide charge density. The conduction mechanism of SrTiO/sub 3/ under positive and negative gate bias can be explained by Schottky emission and the Poole-Frenkel (P-F) mechanism, respectively.
Keywords :
MOS capacitors; Poole-Frenkel effect; annealing; dangling bonds; dielectric thin films; epitaxial layers; interface states; leakage currents; molecular beam epitaxial growth; strontium compounds; 100 A; 450 C; 5.4 A; MBE; MOS capacitor; MOS gate dielectric; MOSFET; Poole-Frenkel mechanism; Schottky emission; Si; SrTiO/sub 3/ epitaxial film; SrTiO/sub 3/-Si; conduction mechanism; dangling bond passivation; dispersion characteristics; electrical characteristics; equivalent oxide thickness; fixed oxide charge density; hysteresis characteristics; incomplete metal layer oxidation; interface state density; leakage current density; low temperature post-metal forming gas annealing; molecular beam epitaxy; negative gate bias; p-Si[100]; positive gate bias; Annealing; Crystallization; Dielectrics; Electric variables; Interface states; Leakage current; MOS capacitors; Molecular beam epitaxial growth; Silicon; Strontium;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175996
