• DocumentCode
    3132137
  • Title

    Multicomponent zone melting growth of ternary InGaAs bulk crystal

  • Author

    Suzuki, T. ; Kusunoki, T. ; Katoh, T. ; Nakajima, K.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1995
  • fDate
    9-13 May 1995
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    A 13 mm thick InxGa1-xAs crystal with n=0.14 has been successfully grown by a method of multicomponent zone melting growth. The alloy composition gradually changes along the growth direction, and this change is well explained by a temperature profile. A good uniformity in the alloy composition along the direction normal to the growth was also achieved
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; temperature distribution; zone melting; 13 mm; InxGa1-xAs crystal; InGaAs; alloy composition; good uniformity; growth direction; multicomponent zone melting growth; temperature profile; ternary InGaAs bulk crystal; Chemical analysis; Cooling; Crystalline materials; Crystals; Gallium arsenide; Indium gallium arsenide; Laser theory; Quantum well lasers; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
  • Conference_Location
    Hokkaido
  • Print_ISBN
    0-7803-2147-2
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1995.522072
  • Filename
    522072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3132137