A low-power and low-noise neural amplifier for all-diamond neural probes

Author

Naeem, Ahmad ; Bazaz, Shafaat A. ; Aslam, Dean M.

Author_Institution

Fac. of Electron. Eng., GIK Inst. of Eng. Sci. & Technol., Topi, Pakistan

fYear

2010

fDate

18-19 Oct. 2010

Firstpage

327

Lastpage

330

Abstract

A low-power, low-noise, front-end neural signal amplifier is designed for all-diamond neural recording probes. The neural amplifier provides a gain of 39.6 dB with a high cutoff frequency of 9.8 kHz. It effectively removes DC, with a real-time tunable low cutoff frequency between 10 Hz and 100 Hz. The consumed power is 51 μW with an input referred noise of 7.78 μV_rms between 10 Hz and 10 kHz. The amplifier is designed in austriamicrosystems 0.35 μm double-poly, 4-metal, n-well CMOS process and consumes an area of 0.012 mm² using 3.3 V power supplies.

Keywords

CMOS integrated circuits; amplifiers; integrated circuit noise; neurophysiology; prosthetics; CMOS process; all-diamond neural probes; austriamicrosystems; frequency 10 Hz to 9.8 kHz; front-end neural signal amplifier; gain 39.6 dB; low noise neural amplifier; low power neural amplifier; power 51 muW; voltage 3.3 V; Cutoff frequency; Immune system; Logic gates; MOSFETs; Noise; Probes; Prosthetics; Low Noise; Low Power; Neural Amplifier; Neural Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Technologies (ICET), 2010 6th International Conference on

Conference_Location

Islamabad

Print_ISBN

978-1-4244-8057-9

Type

conf

DOI

10.1109/ICET.2010.5638467

Filename

5638467