Fabrication of crystal-facet mirrors for short cavity lasers by selective InP epitaxy on etched sidewalls

Author

Sugimoto, H. ; Gotoda, M. ; Isu, T. ; Nunoshita, M.

Author_Institution

Semicond. Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

65

Lastpage

67

Abstract

Crystal facets of InP for the reflection mirrors of short cavity laser diodes were successfully fabricated by a novel wafer process without use of cleavage. Selective InP epitaxial growth on sidewalls formed by dry etching was realized as vertical and smooth facets from crystal facets formed by cleavage. A grown facets short cavity laser diode (GFS-LD) with the facet mirrors was proposed and the characteristics were estimated

Keywords

III-V semiconductors; chemical beam epitaxial growth; crystal faces; indium compounds; laser cavity resonators; laser mirrors; optical fabrication; semiconductor growth; semiconductor lasers; sputter etching; InP; crystal facets; crystal-facet mirrors; dry etching; etched sidewalls; fabrication; grown facets short cavity laser diode; reactive ion etching; reflection mirrors; selective InP epitaxy; short cavity laser diode; short cavity lasers; smooth facets; vertical facets; wafer process; Atomic beams; Diode lasers; Epitaxial growth; Etching; Indium phosphide; Mirrors; Optical device fabrication; Optical reflection; Proposals; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522077

Filename

522077