InP-based HEMTs for microwave and millimeter-wave applications

Author

Smith, PhiUip M.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

68

Lastpage

72

Abstract

This paper focuses primarily on the development in our laboratory of InP-based HEMTs for high frequency analog applications, and, where possible, our work is placed in the context of the industry at large. Perhaps the single most significant new development reported is the increase in device f_max to a value of 600 GHz. Current activity on InP HEMTs is aimed at improving device reliability, developing devices with higher power and efficiency, integrating low noise and power devices into monolithic microwave integrated circuits (MMICs) and improving the producibility of InP HEMT devices and MMICs

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MMIC; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power field effect transistors; semiconductor device noise; semiconductor device reliability; 600 GHz; InAlAs-InGaAs-InP; InP; InP-based HEMTs; MMICs; device reliability; high frequency analog applications; low noise devices; maximum frequency of oscillation; microwave applications; millimeter-wave applications; monolithic microwave integrated circuits; power performance; producibility; Frequency; HEMTs; Indium phosphide; Integrated circuit noise; Integrated circuit reliability; Laboratories; MMICs; MODFETs; Microwave devices; Microwave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522078

Filename

522078