Wafer level stress data successfully used as early burn-in predictor

Author

Sacedon, Ana ; Merino, Miguel A. ; Martin, Victorino ; Iñarrea, Jesus ; Sanchez-Vicente, Francisco J. ; De La Hoz, Jesus ; Ayucar, Jose A. ; Menendez-Moran, Isabel ; Riloba, AIvaro ; Mata, Carlos ; Recio, Miguel

Author_Institution

Agere Syst., Madrid, Spain

fYear

2001

fDate

2001

Firstpage

201

Lastpage

205

Abstract

We show that a simple post-stress test can provide a good early reliability indicator. The defect types that have been revealed by this post-stress test are two types of conductive particles on metal levels. This early indicator has been of great value when dealing with potentially contaminated wafers/lots and to evaluate and to prioritize the corrective actions to solve the line issues

Keywords

integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated circuit yield; surface contamination; conductive particles; corrective actions; defect types; early burn-in predictor; early reliability indicator; metal levels; post-stress test; potentially contaminated lots; potentially contaminated wafers; prioritized corrective actions; wafer level stress data; Degradation; Failure analysis; Gold; Inspection; Probes; Production; Pulp manufacturing; Steel; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI

Conference_Location

Munich

ISSN

1078-8743

Print_ISBN

0-7803-6555-0

Type

conf

DOI

10.1109/ASMC.2001.925647

Filename

925647