Title :
60 GHz monolithic LNA utilizing high-speed InAlAs/InGaAs/InP HEMTs and coplanar waveguides
Author :
Berg, M. ; Dickmann, Juergen ; Bischof, W. ; Kosslowskii, S. ; Narozny, P.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
A monolithic two-stage low noise amplifier (LNA) on InP substrate is presented. Coplanar waveguides and lumped elements are used for the matching and biasing networks. The circuit is fully passivated and contains common ports for the gate and the drain bias. The total chip size is 2 mm×1 mm. A gain of 15 dB and an input and output matching better than -8 dB were achieved at 60 GHz
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar waveguides; field effect MIMIC; gallium arsenide; impedance matching; indium compounds; integrated circuit noise; 15 dB; 60 GHz; InAlAs-InGaAs-InP; InP; InP substrate; V-band LNA chip; biasing networks; common ports; coplanar waveguides; fully passivated circuit; high-speed InAlAs/InGaAs/InP HEMTs; input/output matching; lumped elements; matching networks; monolithic two-stage low noise amplifier; small-signal power gain; total chip size; Circuit noise; Coplanar waveguides; Gain; HEMTs; Impedance matching; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MODFETs;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522080
