Title :
40-Gb/s-class InP HEMT ICs for very-high-speed optical communications
Author :
Imai, Yuhki ; Nakamura, Makoto ; Kimura, Shunji ; Umeda, Yohtaro ; Enoki, Takatonio
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
Future very-high-volume optical communication systems will require several-dozen-Gb/s ICs. The InP HEMT is one of the best candidates for these ICs due to its inherent millimeter-wave performance. This paper describes 40-Gb/s-class analog InP HEMT ICs that have been used with new design techniques to build high-speed optical receivers. Four kinds of ICs are covered: a preamplifier, a baseband amplifier, a limiting amplifier, and a Gilbert cell. Even in this early development stage, all ICs show promising performances that are superior or compatible to the best-ever reported results
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; distributed amplifiers; field effect MIMIC; field effect analogue integrated circuits; gallium arsenide; high-speed optical techniques; indium compounds; optical receivers; preamplifiers; very high speed integrated circuits; 40 Gbit/s; 50 GHz; Gilbert cell; InAlAs/InGaAs/InP; InP; InP HEMT ICs; distributed baseband amplifier; high-speed optical receivers; limiting amplifier; millimeter-wave performance; preamplifier; very-high-speed optical communications; very-high-volume optical communication systems; HEMTs; High speed optical techniques; Indium phosphide; Millimeter wave communication; Millimeter wave technology; Optical amplifiers; Optical design; Optical fiber communication; Optical receivers; Preamplifiers;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522083
