Title :
Reduction of dislocation densities in InP single crystals by the TB-LEC method
Author :
Hirano, R. ; Uchida, M.
Author_Institution :
Compound Semicond. Mater. Dept., Japan Energy Corp., Ibaraki, Japan
Abstract :
We have developed a modified LEC method with a thermal baffle (TB), by which low dislocation density InP crystals can be grown. In this method, a thermal baffle is set on top of the crucible in order to suppress the gas convection and thus to improve the temperature gradient in the LEC furnace. The dislocation density depends not only on the temperature gradient but also on the other growth conditions, such as crystal/crucible rotational speeds, cooling conditions, and crucible weight. The rotational condition is an important factor for the reduction of the dislocation density since the solid/liquid (SL)interface shape changes with the rotational conditions
Keywords :
III-V semiconductors; crystal growth from melt; dislocation density; dislocation etching; indium compounds; semiconductor growth; InP; InP single crystals; LEC furnace; TB-LEC method; cooling conditions; crucible; crucible weight; crystal/crucible rotational speeds; dislocation densities; gas convection; growth conditions; low dislocation density; modified LEC method; rotational condition; solid/liquid interface shape; temperature gradient; thermal baffle; Area measurement; Cooling; Crystals; Density measurement; Indium phosphide; Iron; Semiconductor materials; Temperature dependence; Tin; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522085
