Unintentional impurity incorporation at the interface between InP substrate and buffer layer grown by LP-MOVPE

Author

Hollfelder, M. ; Hardtdegen, H. ; Breuer, U. ; Holzbrecher, H. ; Carius, R. ; Lüth, H.

Author_Institution

Inst. fur Schicht- und Ionentech., Forschungszentrum Julich GmbH, Germany

fYear

1995

fDate

9-13 May 1995

Firstpage

132

Lastpage

135

Abstract

Multilayer structures for many device applications require a highly resistive and perfect crystalline InP buffer layer. Due to unintentional impurity incorporation at the substrate epitaxial layer interface, this buffer layer is often conductive leading for example to poor pinch off characteristics in diodes. In this study we report on a systematic investigation of the origin of highly conductive epitaxial InP buffer layers and how they can be avoided

Keywords

Hall effect; III-V semiconductors; impurity distribution; indium compounds; photoluminescence; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; substrates; vapour phase epitaxial growth; Hall effect; InP; InP buffer layer; InP substrate; LP-MOVPE; SIMS depth profiles; conductive epitaxial buffer layers; excitonic photoluminescence; multilayer structures; substrate epitaxial layer interface; unintentional impurity incorporation; Buffer layers; Epitaxial growth; Epitaxial layers; Excitons; Impurities; Indium phosphide; Inductors; Nonhomogeneous media; Photoluminescence; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522095

Filename

522095